| No. |
Part Name |
Description |
Manufacturer |
| 1 |
B2761D |
Dual operational amplifier with Darlington output, internal frequency compensation, possibly equivalent TAA2761A |
RFT |
| 2 |
B2765D |
Dual operational amplifier with Darlington output, internal frequency compensation, extended temperature range, possibly equivalent TAA2765A |
RFT |
| 3 |
B2765S |
Double operational amplifier with Darlington output, internal frequency compensation, in a hybrid-friendly housing |
RFT |
| 4 |
HSB276AS |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 5 |
HSB276AS |
Diodes>Switching |
Renesas |
| 6 |
HSB276AYP |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 7 |
HSB276AYP |
Diodes>Switching |
Renesas |
| 8 |
HSB276S |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 9 |
HSB276S |
Diodes>Switching |
Renesas |
| 10 |
NB2760A |
Low Power, Reduced EMI Clock Synthesizer |
ON Semiconductor |
| 11 |
NB2762A |
Low Power, Reduced EMI Clock Synthesizer |
ON Semiconductor |
| 12 |
NB2769A |
Low Power, Reduced EMI Clock Synthesizer |
ON Semiconductor |
| | | |
