| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ISB35832 |
HCMOS STRUCTURED ARRAY |
ST Microelectronics |
| 2 |
MB358 |
SINGLE PHASE 35 AMP BRIDGE RECTIFIERS |
Bytes |
| 3 |
MB358 |
35 A high current bridge rectifier. Max reccurent peak reverse voltage 800 V. |
Comchip Technology |
| 4 |
MB358 |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
DC Components |
| 5 |
MB358 |
SINGLE PHASE 35 AMP BRIDGE RECTIFIERS |
Formosa MS |
| 6 |
MB358 |
35A, 800V ultra fast recovery rectifier |
MCC |
| 7 |
MB358 |
35 Amp Single Phase Bridge Rectifier 50 to 1000 Volts |
Micro Commercial Components |
| 8 |
MB358 |
Diode Rectifier Bridge Single 800V 35A 4-Pin MB-35 |
New Jersey Semiconductor |
| 9 |
MB358 |
SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 35 Amperes) |
Rectron Semiconductor |
| 10 |
MB358-BC01 |
35A, 800V ultra fast recovery rectifier |
MCC |
| 11 |
MB358-BC01 |
35 Amp Single Phase Bridge Rectifier 50 to 1000 Volts |
Micro Commercial Components |
| 12 |
MB358W |
SINGLE PHASE 35 AMP BRIDGE RECTIFIERS |
Bytes |
| 13 |
MB358W |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
DC Components |
| 14 |
MB358W |
SINGLE PHASE 35 AMP BRIDGE RECTIFIERS |
Formosa MS |
| 15 |
MB358W |
BRIDGE RECTIFIERS |
Micro Commercial Components |
| 16 |
NX8562LB358-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1535.82 nm. Frequency 195.20 THz. Anode ground. FC-PC connector. |
NEC |
| 17 |
NX8563LB358-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1535.82 nm. Frequency 195.20 THz. FC-PC connector. Anode ground. |
NEC |
| 18 |
SB358 |
Bridge: Standard |
Taiwan Semiconductor |
| 19 |
SB358G |
Bridge: Standard |
Taiwan Semiconductor |
| 20 |
SB358GM |
Bridge: Standard |
Taiwan Semiconductor |
| 21 |
SB358GW |
Bridge: Standard |
Taiwan Semiconductor |
| 22 |
SB358M |
Bridge: Standard |
Taiwan Semiconductor |
| 23 |
SB358W |
Bridge: Standard |
Taiwan Semiconductor |
| | | |
