| No. |
Part Name |
Description |
Manufacturer |
| 1 |
M295V102BB35N1T |
1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory |
SGS Thomson Microelectronics |
| 2 |
M295V102BB35N1T |
1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory |
ST Microelectronics |
| 3 |
M29F102BB35N1 |
1 MBIT (64KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY |
ST Microelectronics |
| 4 |
M29F102BB35N1F |
1 Mbit (64Kb x16, Boot Block) Single Supply Flash Memory |
ST Microelectronics |
| 5 |
M29F102BB35N1T |
1 Mbit (64Kb x16, boot block) single supply flash memory, 35ns |
SGS Thomson Microelectronics |
| 6 |
M29F102BB35N1T |
1 Mbit (64Kb x16, Boot Block) Single Supply Flash Memory |
ST Microelectronics |
| 7 |
M29F102BB35N1T |
1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory |
ST Microelectronics |
| 8 |
NTB35N15 |
Power MOSFET 37 Amps, 150 Volts |
ON Semiconductor |
| 9 |
NTB35N15-D |
Power MOSFET 37 Amps, 150 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
| 10 |
RVNB35NV04 |
OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET |
ST Microelectronics |
| 11 |
RVNB35NV04TR |
OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET |
ST Microelectronics |
| 12 |
SPB35N10 |
N-Channel SIPMOS Power Transistor |
Infineon |
| 13 |
SPB35N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, D�PAK, RDSon=45mOhm, 35A, NL |
Infineon |
| 14 |
STB35N65M5 |
N-channel 650 V, 0.085 Ohm, 27 A, MDmesh(TM) V Power MOSFET in D2PAK |
ST Microelectronics |
| 15 |
STB35NF10 |
N-CHANNEL 100V 0.030 OHM 40A TO-220/D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
| 16 |
STB35NF10 |
N-CHANNEL 100V 0.030 OHM 40A TO-220/D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET |
ST Microelectronics |
| 17 |
STB35NF10T4 |
N-CHANNEL 100V 0.030 OHM 40A TO-220/D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET |
ST Microelectronics |
| 18 |
STGB35N35LZ |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 19 |
STGB35N35LZ-1 |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 20 |
STGB35N35LZT4 |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 21 |
VNB35N07 |
�OMNIFET�: FULLY AUTOPROTECTED POWER MOSFET |
SGS Thomson Microelectronics |
| 22 |
VNB35N07 |
"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET |
ST Microelectronics |
| 23 |
VNB35N0713TR |
OMNIFET FULLY AUTOPROTECTED POWER MOSFET |
ST Microelectronics |
| 24 |
VNB35NV04 |
"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET |
ST Microelectronics |
| 25 |
VNB35NV04-E |
OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET |
ST Microelectronics |
| 26 |
VNB35NV0413TR |
OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET |
ST Microelectronics |
| 27 |
VNB35NV04TR-E |
OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET |
ST Microelectronics |
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