| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FQB3N60 |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 2 |
MTB3N60E |
TMOS POWER FET 3.0 AMPERES 600 VOLTS |
Motorola |
| 3 |
MTB3N60E |
D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 4 |
MTB3N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 5 |
NB3N65027 |
3.3 V Programmable 3-PLL Clock Synthesizer with 6 LVTTL/LVCMOS Outputs w/OE |
ON Semiconductor |
| 6 |
PHB3N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 7 |
STB3N60-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 8 |
STB3N60-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| | | |
