| No. |
Part Name |
Description |
Manufacturer |
| 1 |
STB3NC60 |
N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET |
SGS Thomson Microelectronics |
| 2 |
STB3NC60 |
N-CHANNEL 600V - 3.3 OHM - 3A - D2PAK/I2PAK POWERMESH II MOSFET |
ST Microelectronics |
| 3 |
STB3NC60T4 |
N-CHANNEL 600V - 3.3 OHM - 3A - D2PAK/I2PAK POWERMESH II MOSFET |
ST Microelectronics |
| 4 |
STB3NC90 |
N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowerMESH��III MOSFET |
ST Microelectronics |
| 5 |
STB3NC90Z |
N-CHANNEL 900V 3.2 OHM 3.5A D2PAK ZENER-PROTECTED POWERMESH III MOSFET |
SGS Thomson Microelectronics |
| 6 |
STB3NC90Z |
N-CHANNEL 900V 3.2 OHM 3.5A D2PAK ZENER-PROTECTED POWERMESH III MOSFET |
ST Microelectronics |
| 7 |
STB3NC90Z-1 |
N-CHANNEL 900V 3.2 OHM 3.5A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFET |
SGS Thomson Microelectronics |
| 8 |
STB3NC90Z-1 |
N-CHANNEL 900V 3.2 OHM 3.5A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFET |
ST Microelectronics |
| 9 |
STGB3NC120HD |
7 A, 1200 V very fast IGBT with Ultrafast diode |
ST Microelectronics |
| 10 |
STGB3NC120HDT4 |
7 A, 1200 V very fast IGBT with Ultrafast diode |
ST Microelectronics |
| | | |
