| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BB403 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
Hitachi Semiconductor |
| 2 |
BB403M |
Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
Hitachi Semiconductor |
| 3 |
CDB403E |
Quad two input NAND gate, open collector (5.5V), pinout |
IPRS Baneasa |
| 4 |
CDB403E |
QUADRUPLE 2-INPUT NAND GATE WITH OPEN COLLECTOR OUTPUT (5.5V) |
IPRS Baneasa |
| 5 |
CDB403EM |
Quad two input NAND gate, open collector (5.5V), pinout |
IPRS Baneasa |
| 6 |
DCB403S |
DC/DC converter. 25 W output series. Output voltage 15 VDC; output current 1.7 A. Input range 110 V nominal (85-140 VDC). |
International Power Sources |
| 7 |
FDB4030L |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 8 |
IRLB4030 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 9 |
IRLB4030PBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 10 |
K7B403225B |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
| 11 |
K7B403225B-QC |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
| 12 |
K7B403625B |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
| 13 |
K7B403625B K7B403225B K7B401825B |
128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
| 14 |
K7B403625B K7B403225B K7B401825B |
128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
| 15 |
K7B403625B-QC |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
| 16 |
K7B403625M |
128K x 36-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
| 17 |
MBRB4030 |
SWITCHMODE�� Power Rectifier |
Motorola |
| 18 |
MBRB4030 |
40A 30V Schottky Rectifier |
ON Semiconductor |
| 19 |
MBRB4030-D |
SWITCHMODE Power Rectifier |
ON Semiconductor |
| 20 |
MBRB4030T4 |
40A 30V Schottky Rectifier |
ON Semiconductor |
| 21 |
MSB403S |
Bridge Rectifier |
Rectron Semiconductor |
| 22 |
Q62702-B403 |
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) |
Siemens |
| 23 |
TEB4033 |
QUAD BIPOLAR OPERATIONAL AMPLIFIERS |
ST Microelectronics |
| 24 |
TEB4033D |
400mW; V(cc / in): +-18V; quad bipolar operational amplifier |
SGS Thomson Microelectronics |
| 25 |
TEB4033J |
400mW; V(cc / in): +-18V; quad bipolar operational amplifier |
SGS Thomson Microelectronics |
| 26 |
TEB4033N |
400mW; V(cc / in): +-18V; quad bipolar operational amplifier |
SGS Thomson Microelectronics |
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