| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BB501 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
Hitachi Semiconductor |
| 2 |
BB501C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3 |
BB501C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 4 |
BB501C |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 5 |
BB501M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 6 |
BB501M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 7 |
BB501M |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 8 |
MAX108CHC-B50105 |
±5V, 1.5Gsps, 8-Bit, Ultra High-Speed, A to D Converter with On-Chip 2.2GHz Track/Hold Amplifier |
MAXIM - Dallas Semiconductor |
| 9 |
MB501 |
50 A high current bridge rectifier. Max reccurent peak reverse voltage 100 V. |
Comchip Technology |
| 10 |
MB501 |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
DC Components |
| 11 |
MB501 |
50 Amp Single Phase Bridge Rectifier 50 to 1000 Volts |
Micro Commercial Components |
| 12 |
MB5010 |
50 A high current bridge rectifier. Max reccurent peak reverse voltage 1000 V. |
Comchip Technology |
| 13 |
MB5010 |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
DC Components |
| 14 |
MB5010 |
50 Amp Single Phase Bridge Rectifier 50 to 1000 Volts |
Micro Commercial Components |
| 15 |
MB5010W |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
DC Components |
| 16 |
MB5010W |
50 Amp Single Phase Bridge Rectifier 50 to 1000 Volts |
Micro Commercial Components |
| 17 |
MB501L |
TWO MODULE PRESCALERS |
Fujitsu Microelectronics |
| 18 |
MB501W |
50 mA single-phase silicon bridge rectifier |
DC Components |
| 19 |
MB501W |
50 Amp Single Phase Bridge Rectifier 50 to 1000 Volts |
Micro Commercial Components |
| 20 |
NCB-H1206B501TR |
Ferrite Chip Beads |
etc |
| 21 |
NCB1206B501TR |
Ferrite Chip Beads |
etc |
| 22 |
NX8562LB501-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1550.11 nm. Frequency 193.40 THz. Anode ground. FC-PC connector. |
NEC |
| 23 |
NX8563LB501 |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
| 24 |
NX8563LB501-BA |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
| 25 |
NX8563LB501-CA |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
| 26 |
RB501SM-30 |
Schottky Barrier Diode |
ROHM |
| 27 |
RB501SM-30FH |
Schottky Barrier Diode |
ROHM |
| 28 |
RB501SM-30FHT2R |
Schottky Barrier Diode |
ROHM |
| 29 |
RB501SM-30T2R |
Schottky Barrier Diode |
ROHM |
| 30 |
RB501V-40 |
SCHOTTKY BARRIER RECTIFIERS |
Micro Commercial Components |
| | | |
