No. |
Part Name |
Description |
Manufacturer |
1 |
2SB503 |
Industrial Transistor Specification Table |
TOSHIBA |
2 |
2SB503 |
Silicon PNP epitaxial MESA transistor, audio power amplifier, regulator applications |
TOSHIBA |
3 |
2SB503A |
Silicon PNP triple diffused audio power transistor |
TOSHIBA |
4 |
2SB503A |
SILICON PNP TRANSISTOR |
TOSHIBA |
5 |
BB503 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
Hitachi Semiconductor |
6 |
BB503C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
7 |
BB503C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
8 |
BB503C |
Transistors>Amplifiers/MOSFETs |
Renesas |
9 |
BB503M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
10 |
BB503M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
11 |
BB503M |
Transistors>Amplifiers/MOSFETs |
Renesas |
12 |
FSB50325A |
Motion SPM� 5 Series |
Fairchild Semiconductor |
13 |
FSB50325AT |
Motion SPM� 5 Series |
Fairchild Semiconductor |
14 |
FSB50325S |
Smart Power Module (SPM®) |
Fairchild Semiconductor |
15 |
FSB50325T |
Motion SPM� 5 Series |
Fairchild Semiconductor |
16 |
FSB50325TD |
Smart Power Module (SPM�), Motion-SPM� |
Fairchild Semiconductor |
17 |
NC14000-B503 |
Cat5 Extender Unit - NC14003-B713 |
Fujitsu Microelectronics |
18 |
SBB503R3S |
30W Total Output Power 5 Vin +3.3 Vout Single DC-DC Radiation Hardened Converter in a SBB Package. |
International Rectifier |
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