| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SB507 |
POWER TRANSISTORS(3.0A,60V,30W) |
MOSPEC Semiconductor |
| 2 |
2SB507 |
Silicon PNP Power Transistors TO-220C package |
Savantic |
| 3 |
2SB507 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 4 |
2SB507D |
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE |
SANYO |
| 5 |
CSB507 |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 - 320 hFE. |
Continental Device India Limited |
| 6 |
CSB507C |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 - 80 hFE. |
Continental Device India Limited |
| 7 |
CSB507D |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 8 |
CSB507E |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. |
Continental Device India Limited |
| 9 |
CSB507F |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. |
Continental Device India Limited |
| 10 |
FSB50760SF |
Motion SPM� 5 SuperFET� Series |
Fairchild Semiconductor |
| 11 |
FSB50760SFS |
Motion SPM� 5 SuperFET� Series |
Fairchild Semiconductor |
| 12 |
FSB50760SFT |
Motion SPM� 5 SuperFET� Series |
Fairchild Semiconductor |
| 13 |
HSB507 |
Emitter to base voltage:5V 3A PNP epitaxial planar transistor |
Hi-Sincerity Microelectronics |
| 14 |
MB507 |
1.6GHz TWO MODULUS PRESCALER |
Fujitsu Microelectronics |
| | | |
