No. |
Part Name |
Description |
Manufacturer |
1 |
NDB608A |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
2 |
NDB608AE |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
3 |
NDB608B |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
4 |
NDB608BE |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
5 |
NX8562LB6083-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1608.32 nm. Frequency 186.40 THz. Anode ground. FC-PC connector. |
NEC |
6 |
NX8563LB6083-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1608.32 nm. Frequency 186.40 THz. FC-PC connector. Anode ground. |
NEC |
7 |
OPB608 |
Reflective Object Sensor |
Optek Technology |
8 |
OPB608A |
REFLECTIVE OBJECT SENSORS |
Optek Technology |
9 |
OPB608A |
Reflective Object Sensor |
Optek Technology |
10 |
OPB608B |
REFLECTIVE OBJECT SENSORS |
Optek Technology |
11 |
OPB608B |
Reflective Object Sensor |
Optek Technology |
12 |
OPB608C |
Reflective Object Sensor |
Optek Technology |
13 |
OPB608C |
REFLECTIVE OBJECT SENSORS |
Optek Technology |
14 |
OPB608R |
Reflective Object Sensor |
Optek Technology |
15 |
OPB608V |
Reflective Object Sensor |
Optek Technology |
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