| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FQB6N60 |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 2 |
FQB6N60C |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 3 |
FQB6N60CTM |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 4 |
FQB6N60TM |
600V N-Channel QFET |
Fairchild Semiconductor |
| 5 |
FQB6N60TM_NL |
600V N-Channel QFET |
Fairchild Semiconductor |
| 6 |
IRFIB6N60A |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package |
International Rectifier |
| 7 |
IRFIB6N60APBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package |
International Rectifier |
| 8 |
MTB6N60 |
TMOS POWER FET 6.0 AMPERES 600 VOLTS |
Motorola |
| 9 |
MTB6N60E |
TMOS POWER FET 6.0 AMPERES 600 VOLTS |
Motorola |
| 10 |
MTB6N60E1 |
TMOS POWER FET 6.0 AMPERES 600 VOLTS |
Motorola |
| 11 |
MTB6N60E1 |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 12 |
MTB6N60E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13 |
PHB6N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 14 |
STB6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| | | |
