| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SB753 |
Silicon PNP Power Transistors TO-220C package |
Savantic |
| 2 |
2SB753 |
Silicon PNP triple diffused high current switching transistor |
TOSHIBA |
| 3 |
2SB753 |
2SB753 |
Unknow |
| 4 |
2SB753 |
2SB753 |
Unknow |
| 5 |
ERA2AEB753X |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 6 |
ERA3AEB753V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 7 |
ERA3APB753V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 8 |
ERA3ARB753V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 9 |
ERA6AEB753V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 10 |
ERA6APB753V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 11 |
ERA6ARB753V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 12 |
ERA8AEB753V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 13 |
ERA8APB753V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 14 |
ERA8ARB753V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 15 |
IRFB7530 |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 package |
International Rectifier |
| 16 |
IRFB7530PBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 package |
International Rectifier |
| 17 |
IRFB7534 |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 package |
International Rectifier |
| 18 |
IRFB7534PBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 package |
International Rectifier |
| 19 |
IRFB7537 |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 package |
International Rectifier |
| 20 |
IRFB7537PBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 package |
International Rectifier |
| 21 |
LB7535P |
High-voltage, two-channel electronic attenuator |
SANYO |
| 22 |
NX8562LB753-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1575.36 nm. Frequency 190.30 THz. Anode ground. FC-PC connector. |
NEC |
| 23 |
NX8563LB753-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1575.36 nm. Frequency 190.30 THz. FC-PC connector. Anode ground. |
NEC |
| | | |
