No. |
Part Name |
Description |
Manufacturer |
1 |
CEB8030 |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
2 |
CEB8030L |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
3 |
CEB803AL |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
4 |
DS_K7B803625B |
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM |
Samsung Electronic |
5 |
ECWHC3B803JA |
Film Capacitors (Electronic Equipment Use) ECWH(C) |
Panasonic |
6 |
FDB8030L |
N-Channel Logic Level PowerTrench MOSFET |
Fairchild Semiconductor |
7 |
K7B803625 |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
8 |
K7B803625A |
256Kx36Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
9 |
K7B803625B |
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM |
Samsung Electronic |
10 |
K7B803625B K7B803225B K7B801825B |
256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
11 |
K7B803625B K7B803225B K7B801825B |
256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
12 |
K7B803625B-QC65 |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
13 |
K7B803625B-QC75 |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
14 |
K7B803625M |
256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
15 |
MAB8031A-2A |
SINGLE CHIP 8 BIT MICROCONTROLLER |
Philips |
16 |
MAB8031A-2N |
SINGLE CHIP 8 BIT MICROCONTROLLER |
Philips |
17 |
MAB8031AH-2-12P |
SINGLE CHIP 8 BIT MICROCONTROLLER |
Philips |
18 |
MAB8031AH-2-12WP |
SINGLE CHIP 8 BIT MICROCONTROLLER |
Philips |
19 |
MAB8035HL |
SINGLE-CHIP 8-BIT MICROCONTROLLER |
Philips |
20 |
MAB8039HL |
SINGLE-CHIP 8-BIT MICROCONTROLLER |
Philips |
21 |
MHB8031H |
Single chip microcomputer |
Tesla Elektronicke |
22 |
MHB8035 |
Single chip microcomputer |
Tesla Elektronicke |
23 |
MHB8035C |
Single chip microcomputer |
Tesla Elektronicke |
24 |
NX8562LB803-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1580.35 nm. Frequency 189.70 THz. Anode ground. FC-PC connector. |
NEC |
25 |
NX8563LB803-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1580.35 nm. Frequency 189.70 THz. FC-PC connector. Anode ground. |
NEC |
26 |
PMFPB8032XP |
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination |
Nexperia |
27 |
PMFPB8032XP |
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination |
NXP Semiconductors |
28 |
SB803 |
Bridge: Standard |
Taiwan Semiconductor |
29 |
SB803G |
Bridge: Standard |
Taiwan Semiconductor |
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