| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1011-050 |
High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications |
SGS Thomson Microelectronics |
| 2 |
1011-055 |
High Power Class C transistor, designed for L-Band Avionics transponder/interrogator output and driver applications |
SGS Thomson Microelectronics |
| 3 |
1011-060 |
High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output |
SGS Thomson Microelectronics |
| 4 |
1011-225 |
High power Class C transistor designed for L-Band Avionics applications |
SGS Thomson Microelectronics |
| 5 |
1011-350 |
High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications |
SGS Thomson Microelectronics |
| 6 |
2N3445 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
| 7 |
2N3446 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
| 8 |
2N3447 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
| 9 |
2N3448 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
| 10 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 11 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 12 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 13 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 14 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 15 |
2N6620 |
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
Siemens |
| 16 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 17 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 18 |
2SA1575 |
PNP Epitaxial Planar Silicon Transistors High-Frequency Amplifier, Wide-Band Amplifier Applications |
SANYO |
| 19 |
2SC1077 |
Silicon NPN epitaxial planar transistor, VHF power amplifiers applications (high voltage), RF Wide-Band amplifiers 40W 175MHz |
TOSHIBA |
| 20 |
2SC154H |
Silicon NPN Triple Diffused LPT Transistor, intended for use in Wide Band Amplifier, High Voltage Switching |
Hitachi Semiconductor |
| 21 |
2SC2098 |
Silicon NPN epitaxial planar transistor, Citizen band and HAM band up to 50MHz RF power amplifier applications |
TOSHIBA |
| 22 |
2SC2570A |
High-Frequency Low Noise transistors for VHF-and UHF band application of 2SC2570A - Application Note |
NEC |
| 23 |
2SC2644 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Wideband Amplifier Applications (fT=4GHz) |
TOSHIBA |
| 24 |
2SC2731 |
UHF TV TUNER FREQUENCY CONVERTER, LOCAL OSCILLATOR AND WIDE BAND AMPLIFIER |
Hitachi Semiconductor |
| 25 |
2SC3772 |
NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications |
SANYO |
| 26 |
2SC3773 |
NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications |
SANYO |
| 27 |
2SC3774 |
NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amplifier, Wide-Band Amplifier Applications |
SANYO |
| 28 |
2SC3775 |
NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amplifier, Wide-Band Amplifier Applications |
SANYO |
| 29 |
2SC3776 |
NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications |
SANYO |
| 30 |
2SC3777 |
NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications |
SANYO |
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