No. |
Part Name |
Description |
Manufacturer |
1 |
2N5871 |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
2 |
2N5871/1 |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
3 |
2N5871/2 |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
4 |
2N5872 |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
5 |
2N5872A |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
6 |
2N5872B |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
7 |
2N5873 |
Silicon NPN EPIBASE AF Power Transistor |
IPRS Baneasa |
8 |
2N5873/1 |
Silicon NPN EPIBASE AF Power Transistor |
IPRS Baneasa |
9 |
2N5873/2 |
Silicon NPN EPIBASE AF Power Transistor |
IPRS Baneasa |
10 |
2N5874 |
Silicon NPN EPIBASE Audiofrequency power transistor |
IPRS Baneasa |
11 |
2N5874A |
Silicon NPN EPIBASE Audiofrequency power transistor |
IPRS Baneasa |
12 |
2N5874B |
Silicon NPN EPIBASE Audiofrequency power transistor |
IPRS Baneasa |
13 |
2SB468 |
Germanium Transistor PNP Diffused Base Alloyed Emitter, intended for use in TV Horizontal Deflection Power Output |
Hitachi Semiconductor |
14 |
2SB468 |
GERMANIUM PNP DIFFUSED BASE ALLOYED EMITTER |
Unknow |
15 |
BD201 |
N-P-N Silicon Epitaxial-BASE A.F. Power Transistor |
Mullard |
16 |
BD203 |
N-P-N Silicon Epitaxial-BASE A.F. Power Transistor |
Mullard |
17 |
BF414 |
Epitaxial planar PNP transistor, intended for use as common base amplifier in the VHF range |
SGS-ATES |
18 |
PS9634 |
POWER TRANSISTOR DRIVING BASE AMPLIFIER BUILT-IN TYPE PHOTOCOUPLER |
NEC |
19 |
PS9634L |
POWER TRANSISTOR DRIVING BASE AMPLIFIER BUILT-IN TYPE PHOTOCOUPLER |
NEC |
20 |
PS9634L-E3 |
POWER TRANSISTOR DRIVING BASE AMPLIFIER BUILT-IN TYPE PHOTOCOUPLER |
NEC |
21 |
PS9634L-E4 |
POWER TRANSISTOR DRIVING BASE AMPLIFIER BUILT-IN TYPE PHOTOCOUPLER |
NEC |
22 |
XE900 |
900 MHz smart tranceiver for base access system. |
XECOM |
23 |
XE924 |
Base access point for multiple remote machines. |
XECOM |
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