| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BC637 |
Silicon NPN Epitaxial Planar Transistor |
AEG-TELEFUNKEN |
| 2 |
BC637 |
0.800W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 40 - 160 hFE |
Continental Device India Limited |
| 3 |
BC637 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 4 |
BC637 |
NPN Silicon AF Transistor |
Infineon |
| 5 |
BC637 |
General Purpose Transistor |
Korea Electronics (KEC) |
| 6 |
BC637 |
Low frequency transistor |
mble |
| 7 |
BC637 |
Low frequency transistor |
mble |
| 8 |
BC637 |
SILICON TRANSISTORS |
Micro Electronics |
| 9 |
BC637 |
NPN silicon epitaxial planar transistor |
Mikroelektronikai Vallalat |
| 10 |
BC637 |
High Current Transistors |
Motorola |
| 11 |
BC637 |
High Current Transistor |
ON Semiconductor |
| 12 |
BC637 |
NPN medium power transistors |
Philips |
| 13 |
BC637 |
Transistor NPN |
Siemens |
| 14 |
BC637 |
NPN Silicon AF Transistors (High current gain High collector current) |
Siemens |
| 15 |
BC637 |
Transistor. Switching and amplifier applications. Vcer = 60V, Vces = 60V, Vceo= 60V, Vebo = 5V, Pc = 1W, Ic = 1A. |
USHA India LTD |
| 16 |
BC637-10 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 17 |
BC637-16 |
0.800W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 25 - hFE |
Continental Device India Limited |
| 18 |
BC637-16 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 19 |
BC637-16 |
NPN medium power transistors |
Philips |
| 20 |
BC637_D26Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 21 |
BC637_D27Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 22 |
BC637_D75Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 23 |
BC637_L34Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| | | |
