| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BCR10PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 2 |
BCR10PM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 3 |
BCR10PM |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 4 |
BCR10PM-12 |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 5 |
BCR10PM-12L |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 6 |
BCR10PM-8 |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 7 |
BCR10PM-8L |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 8 |
BCR10PN |
Digital Transistors - SOT363 package |
Infineon |
| 9 |
BCR10PN |
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) |
Siemens |
| | | |
