| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BCR3 |
LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 2 |
BCR30 |
MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3 |
BCR30AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 4 |
BCR30AM |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
| 5 |
BCR30AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 6 |
BCR30AM-12 |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
| 7 |
BCR30AM-12L |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
| 8 |
BCR30AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9 |
BCR30AM-8 |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
| 10 |
BCR30AM-8L |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
| 11 |
BCR30GM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 12 |
BCR35 |
NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit) |
Siemens |
| 13 |
BCR35PN |
Digital Transistors - SOT363 package |
Infineon |
| 14 |
BCR35PN |
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) |
Siemens |
| 15 |
BCR39 |
NPN/PNP Silicon Digital Transistor Array |
Infineon |
| 16 |
BCR39PN |
NPN/PNP Silicon Digital Transistor Array |
Infineon |
| 17 |
BCR3AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 18 |
BCR3AM |
Triac 3 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 19 |
BCR3AM-12 |
Triac 3 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 20 |
BCR3AM-8 |
Triac 3 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 21 |
BCR3AS |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 22 |
BCR3AS |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 23 |
BCR3AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 24 |
BCR3AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 25 |
BCR3KM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 26 |
BCR3KM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 27 |
BCR3KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 28 |
BCR3KM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 29 |
BCR3KM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 30 |
BCR3PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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