No. |
Part Name |
Description |
Manufacturer |
1 |
BCR3 |
LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
2 |
BCR30 |
MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
3 |
BCR30AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
4 |
BCR30AM |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
5 |
BCR30AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
6 |
BCR30AM-12 |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
7 |
BCR30AM-12L |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
8 |
BCR30AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
9 |
BCR30AM-8 |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
10 |
BCR30AM-8L |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
11 |
BCR30GM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
12 |
BCR35 |
NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit) |
Siemens |
13 |
BCR35PN |
Digital Transistors - SOT363 package |
Infineon |
14 |
BCR35PN |
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) |
Siemens |
15 |
BCR39 |
NPN/PNP Silicon Digital Transistor Array |
Infineon |
16 |
BCR39PN |
NPN/PNP Silicon Digital Transistor Array |
Infineon |
17 |
BCR3AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
18 |
BCR3AM |
Triac 3 Amperes/400-600 Volts |
Powerex Power Semiconductors |
19 |
BCR3AM-12 |
Triac 3 Amperes/400-600 Volts |
Powerex Power Semiconductors |
20 |
BCR3AM-8 |
Triac 3 Amperes/400-600 Volts |
Powerex Power Semiconductors |
21 |
BCR3AS |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
22 |
BCR3AS |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
23 |
BCR3AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
24 |
BCR3AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
25 |
BCR3KM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
26 |
BCR3KM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
27 |
BCR3KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
28 |
BCR3KM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
29 |
BCR3KM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
30 |
BCR3PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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