No. |
Part Name |
Description |
Manufacturer |
1 |
BD137 |
Silicon NPN Epitaxial Planar Power Transistor |
AEG-TELEFUNKEN |
2 |
BD137 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
3 |
BD137 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 - 250 hFE. Complementary BD138 |
Continental Device India Limited |
4 |
BD137 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
5 |
BD137 |
NPN High-speed, medium power, general purpose transistor, plastic case |
IPRS Baneasa |
6 |
BD137 |
Low frequency, medium power silicon NPN transistor |
IPRS Baneasa |
7 |
BD137 |
Silicon NPN Epitaxial Planar Power Transistor |
IPRS Baneasa |
8 |
BD137 |
Si-PLANAR EPITAXIAL-npn TRANSISTOR |
IPRS Baneasa |
9 |
BD137 |
Low frequency transistor |
mble |
10 |
BD137 |
Low frequency transistor |
mble |
11 |
BD137 |
Low frequency transistor |
mble |
12 |
BD137 |
Low frequency transistor |
mble |
13 |
BD137 |
NPN silicon epitaxial planar power transistor |
Mikroelektronikai Vallalat |
14 |
BD137 |
Plastic Medium Power Silicon NPN Transistor |
Motorola |
15 |
BD137 |
Silicon n-p-n medium power transistor |
Mullard |
16 |
BD137 |
NPN Medium Power Transistor |
National Semiconductor |
17 |
BD137 |
Power 1.5A 60V NPN |
ON Semiconductor |
18 |
BD137 |
NPN power transistors |
Philips |
19 |
BD137 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
20 |
BD137 |
NPN silicon power transistor AF amplification and general purpose |
SESCOSEM |
21 |
BD137 |
Power NPN Epitaxial transistor - Fast switching |
SESCOSEM |
22 |
BD137 |
hfe min 40 Transistor polarity NPN Current Ic continuous max 1 A Voltage Vceo 60 V Current Ic (hfe) 0.15 A Power Ptot 12.5 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
23 |
BD137 |
Transistor NPN |
Siemens |
24 |
BD137 |
NPN Silicon Transistor for AF driver and power stages of medium output |
Siemens |
25 |
BD137 |
NPN SILICON TRANSISTORS |
Siemens |
26 |
BD137 |
Silicon NPN epitaxial medium power transistor |
TOSHIBA |
27 |
BD137 |
Epitaxial silicon NPN planar power transistor |
TUNGSRAM |
28 |
BD137 |
Tranzystor ma�ej cz�stotliwo�ci du�ej mocy |
Ultra CEMI |
29 |
BD137 paired |
NPN Silicon Transistor for AF driver and power stages of medium output |
Siemens |
30 |
BD137-10 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 63 - 160 hFE. Complementary BD138-10 |
Continental Device India Limited |
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