| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BD137 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 2 |
BD137 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 - 250 hFE. Complementary BD138 |
Continental Device India Limited |
| 3 |
BD137 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 4 |
BD137 |
Silicon NPN Epitaxial Planar Power Transistor |
IPRS Baneasa |
| 5 |
BD137 |
Si-PLANAR EPITAXIAL-npn TRANSISTOR |
IPRS Baneasa |
| 6 |
BD137 |
Plastic Medium Power Silicon NPN Transistor |
Motorola |
| 7 |
BD137 |
Silicon n-p-n medium power transistor |
Mullard |
| 8 |
BD137 |
Power 1.5A 60V NPN |
ON Semiconductor |
| 9 |
BD137 |
NPN power transistors |
Philips |
| 10 |
BD137 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 11 |
BD137 |
NPN silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 12 |
BD137 |
Power NPN Epitaxial transistor - Fast switching |
SESCOSEM |
| 13 |
BD137 |
hfe min 40 Transistor polarity NPN Current Ic continuous max 1 A Voltage Vceo 60 V Current Ic (hfe) 0.15 A Power Ptot 12.5 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 14 |
BD137 |
NPN SILICON TRANSISTORS |
Siemens |
| 15 |
BD137 |
Tranzystor ma�ej cz�stotliwo�ci du�ej mocy |
Ultra CEMI |
| 16 |
BD137-10 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 63 - 160 hFE. Complementary BD138-10 |
Continental Device India Limited |
| 17 |
BD137-10 |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 18 |
BD137-10 |
NPN power transistors |
Philips |
| 19 |
BD137-10 |
NPN SILICON TRANSISTORS |
Siemens |
| 20 |
BD137-16 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 100 - 250 hFE. Complementary BD138-16 |
Continental Device India Limited |
| 21 |
BD137-16 |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 22 |
BD137-16 |
NPN power transistors |
Philips |
| 23 |
BD137-25 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 160 - 400 hFE. Complementary BD138-25 |
Continental Device India Limited |
| 24 |
BD137-6 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 - 100 hFE. Complementary BD138-6 |
Continental Device India Limited |
| 25 |
BD137-6 |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 26 |
BD137-6 |
NPN SILICON TRANSISTORS |
Siemens |
| 27 |
BD137/10 |
Silicon NPN Epitaxial Planar Power Transistor |
IPRS Baneasa |
| 28 |
BD137/16 |
Silicon NPN Epitaxial Planar Power Transistor |
IPRS Baneasa |
| 29 |
BD137/25 |
Silicon NPN Epitaxial Planar Power Transistor |
IPRS Baneasa |
| 30 |
BD137/4 |
Silicon NPN Epitaxial Planar Power Transistor |
IPRS Baneasa |
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