No. |
Part Name |
Description |
Manufacturer |
1 |
BD536 |
50.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
2 |
BD536 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
3 |
BD536 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 50W. |
General Electric Solid State |
4 |
BD536 |
complementary silicon PNP plastic power transistor. 60 V, 4 A, 50 W. |
Motorola |
5 |
BD536 |
PNP Epitaxial Power Transistor |
National Semiconductor |
6 |
BD536 |
PNP Silicon Power Transistor 50W |
National Semiconductor |
7 |
BD536 |
Silicon PNP Power Transistors TO-220C package |
Savantic |
8 |
BD536 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
9 |
BD536 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
10 |
BD536 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
11 |
BD536 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
12 |
BD536 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
ST Microelectronics |
13 |
BD5360 |
VOLTAGE DETECTOR IC |
etc |
14 |
BD5360FVE |
Voltage detector, 6.0V |
ROHM |
15 |
BD5360FVE-TR |
Voltage Detector with Adjustable Delay Time |
ROHM |
16 |
BD5360G |
Voltage detector, 6V |
ROHM |
17 |
BD5360G-TR |
Voltage Detector with Adjustable Delay Time |
ROHM |
18 |
BD5360G/FVE |
Voltage detectors > CMOS Voltage detector IC with external C delay circuit (CMOS output type) |
ROHM |
19 |
BD536J |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
20 |
ERJ3RBD5360V |
General Purpose Precision Thick Chip Resistors |
Panasonic |
21 |
ERJ3RBD5361V |
General Purpose Precision Thick Chip Resistors |
Panasonic |
22 |
ERJ3RBD5362V |
General Purpose Precision Thick Chip Resistors |
Panasonic |
23 |
ERJ6RBD5360V |
General Purpose Precision Thick Chip Resistors |
Panasonic |
24 |
ERJ6RBD5361V |
General Purpose Precision Thick Chip Resistors |
Panasonic |
25 |
ERJ6RBD5362V |
General Purpose Precision Thick Chip Resistors |
Panasonic |
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