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Datasheets for BF1

Datasheets found :: 448
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 10BF10 100V 1A Ultra-Fast Discrete Diode in a SMB package International Rectifier
2 10BF100 1000V 1A Ultra-Fast Discrete Diode in a SMB package International Rectifier
3 10BF100TR 1000V 1A Ultra-Fast Discrete Diode in a SMB package International Rectifier
4 10BF10TR 100V 1A Ultra-Fast Discrete Diode in a SMB package International Rectifier
5 30BF10 100V 3A Ultra-Fast Discrete Diode in a SMC package International Rectifier
6 30BF10TR 100V 3A Ultra-Fast Discrete Diode in a SMC package International Rectifier
7 BF1005 RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB Infineon
8 BF1005 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
9 BF1005R RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB Infineon
10 BF1005S RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB Infineon
11 BF1005S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
12 BF1005SR RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB Infineon
13 BF1005SW Silicon N-Channel MOSFET Tetrode Infineon
14 BF1005W Silicon N-Channel MOSFET Tetrode Infineon
15 BF1009 Silicon N-Channel MOSFET Tetrode for ... Infineon
16 BF1009 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network Siemens
17 BF1009S RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand Infineon
18 BF1009S Silicon N-Channel MOSFET Tetrode for ... Infineon
19 BF1009S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) Siemens
20 BF1009SR RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand Infineon
21 BF1012 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network Siemens
22 BF1012S Silicon N-Channel MOSFET Tetrode Infineon
23 BF1012S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
24 BF1012W SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) Siemens
25 BF109 Silicon NPN RF Transistor COMPELEC
26 BF109 Silicon NPN RF transistor VALVO
27 BF110 Transistor NPN Siemens
28 BF1100 N-channel dual-gate MOSFET NXP Semiconductors
29 BF1100 Dual-gate MOS-FETs Philips
30 BF1100R Dual-gate MOS-FETs Philips


Datasheets found :: 448
Page: | 1 | 2 | 3 | 4 | 5 |



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