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Datasheets found :: 4
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| No. | Part Name | Description | Manufacturer |
|---|---|---|---|
| 1 | BF1009S | RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand | Infineon |
| 2 | BF1009S | Silicon N-Channel MOSFET Tetrode for ... | Infineon |
| 3 | BF1009S | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) | Siemens |
| 4 | BF1009SR | RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand | Infineon |
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Datasheets found :: 4
Page:
| 1 |
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