No. |
Part Name |
Description |
Manufacturer |
1 |
AME8501AEFTBF22 |
Reset time: 210mS; micropower uP reset device |
AME |
2 |
BF222 |
Epitaxial planar NPN transistor, designed for tuners of FM receivers, and features low noise, high gain and excelent forward AGC |
SGS-ATES |
3 |
BF222 |
RF transistor |
SGS-ATES |
4 |
BF224 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
5 |
BF224 |
NPN silicon epitaxial planar transistor |
Mikroelektronikai Vallalat |
6 |
BF224 |
RF Transistor |
Motorola |
7 |
BF224 |
NPN Epitaxial Silicon Planar Transistor |
Texas Instruments |
8 |
BF224 |
Epitaxial NPN silicon planar transistor |
TUNGSRAM |
9 |
BF225 |
NPN silicon, epitaxial, planar transistor |
Mikroelektronikai Vallalat |
10 |
BF225 |
Epitaxial NPN silicon planar transistor |
TUNGSRAM |
11 |
MMBF2201N |
Power MOSFET 300 mAmps, 20 Volts |
ON Semiconductor |
12 |
MMBF2201NT1 |
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
13 |
MMBF2201NT1 |
Power MOSFET 300 mAmps, 20 Volts |
ON Semiconductor |
14 |
MMBF2201NT1-D |
Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323 |
ON Semiconductor |
15 |
MMBF2201NT1G |
Power MOSFET 300 mAmps, 20 Volts |
ON Semiconductor |
16 |
MMBF2201NT3 |
Small-signal MOSFET TMOS single N-channel field effect transistor |
Motorola |
17 |
MMBF2201PT1 |
LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
Motorola |
18 |
MMBF2201PT3 |
Small-signal MOSFET TMOS single P-channel field effect transistor |
Motorola |
19 |
MMBF2202P |
Power MOSFET 300 mAmps, 20 Volts |
ON Semiconductor |
20 |
MMBF2202PT1 |
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
21 |
MMBF2202PT1 |
Power MOSFET 300 mAmps, 20 Volts |
ON Semiconductor |
22 |
MMBF2202PT1-D |
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323 |
ON Semiconductor |
23 |
MMBF2202PT1G |
Power MOSFET 300 mAmps, 20 Volts |
ON Semiconductor |
24 |
MMBF2202PT3 |
LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
Motorola |
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