No. |
Part Name |
Description |
Manufacturer |
1 |
BF410 |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
2 |
BF410A |
N-channel silicon field-effect transistors |
Philips |
3 |
BF410A |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
4 |
BF410B |
N-channel silicon field-effect transistors |
Philips |
5 |
BF410B |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
6 |
BF410C |
N-channel silicon field-effect transistors |
Philips |
7 |
BF410C |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
8 |
BF410D |
N-channel silicon field-effect transistors |
Philips |
9 |
BF410D |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
10 |
BF414 |
Silicon NPN Epitaxial Planar RF Transistor |
AEG-TELEFUNKEN |
11 |
BF414 |
NPN Silicon RF Transistor |
Infineon |
12 |
BF414 |
Epitaxial planar PNP transistor, intended for use as common base amplifier in the VHF range |
SGS-ATES |
13 |
BF414 |
RF transistor |
SGS-ATES |
14 |
BF414 |
NPN Silicon RF Transistor (For low-noise, common base VHF and FM stages) |
Siemens |
15 |
BF414 |
Tranzystor wielkiej cz�stotliwo�ci |
Ultra CEMI |
16 |
BF415 |
Trans GP BJT NPN 250V 0.1A 3-Pin TO-126 |
New Jersey Semiconductor |
17 |
BF416 |
Trans GP BJT NPN 250V 0.1A 3-Pin TO-126 |
New Jersey Semiconductor |
18 |
BF419 |
NPN high-voltage transistor |
Philips |
19 |
BF41931 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
20 |
MMBF4117 |
N-Channel Switch |
Fairchild Semiconductor |
21 |
MMBF4117_NL |
N-Channel Switch |
Fairchild Semiconductor |
22 |
MMBF4118 |
N-Channel Switch |
Fairchild Semiconductor |
23 |
MMBF4119 |
N-Channel Switch |
Fairchild Semiconductor |
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