No. |
Part Name |
Description |
Manufacturer |
1 |
1417K4A |
NetLight 1417K4A 1300 nm Laser 2.5 Gbits/s Transceiver |
Agere Systems |
2 |
1417K5A |
NetLight 1417K5A 2.5 Gbits/s 1300 nm Laser Transceiver with Clock and Data Recovery |
Agere Systems |
3 |
1417K6S |
NetLight 1417K6S 2.5 Gbits/s 1300 nm Laser Transceiver |
Agere Systems |
4 |
2417K4A |
NetLight 2417K4A 1300 nm Laser 2.5 Gbits/s Transceiver |
Agere Systems |
5 |
24C04 |
4KbitSerialI2CBusEEPROMwithUser-DefinedBlockWriteProtection |
ST Microelectronics |
6 |
24C16 |
16/8/4/2/1KbitSerialICBusEEPROM |
ST Microelectronics |
7 |
24LC02 |
2048-Bits Serial EEPROM With Write Protect |
Ceramate |
8 |
24WC02 |
1K/2K/4K/8K/16K-BitSerialE2PROM |
Catalyst Semiconductor |
9 |
24WC16 |
1K/2K/4K/8K/16K-BitSerialE2PROM |
Catalyst Semiconductor |
10 |
25C128 |
128K/256K-BitSPISerialCMOSE2PROM |
Catalyst Semiconductor |
11 |
25C256 |
128K/256K-BitSPISerialCMOSE2PROM |
Catalyst Semiconductor |
12 |
25C64 |
32K/64K-BitSPISerialCMOSE2PROM |
Catalyst Semiconductor |
13 |
2623CS |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
14 |
2623CSA |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
15 |
2623N |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
16 |
2623Y |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
17 |
2625C |
40 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
18 |
27E040T-12 |
512K*8 bits high speed, low power electrically erasable EPROM |
Winbond Electronics |
19 |
28LV64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle |
Microchip |
20 |
37LV128 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV128 is a Serial OTP EPROM device organized internally in a x32 configuration with 131,072 bits and 4096x32 programming word. The 37LV128 is suitable fo |
Microchip |
21 |
37LV36 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 36,288 bits and 1134x32 programming word. The 37LV36 is suitable for m |
Microchip |
22 |
37LV65 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 65,536 bits and 2048x32 programming word. The 37LV36 is suitable for m |
Microchip |
23 |
42S16400A |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
24 |
42S16400A |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
25 |
42S32200 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
26 |
42S32200 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
27 |
50S116T |
512K x 2 Banks x 16 BITS SDRAM |
Ceramate |
28 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
29 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
30 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
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