Datasheets for BJ-1

Datasheets found :: 22 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	CAT28C64BJ-12	64K-Bit CMOS PARALLEL E2PROM	Catalyst Semiconductor
2	CAT28C64BJ-12T	64K-Bit CMOS PARALLEL E2PROM	Catalyst Semiconductor
3	CAT28C64BJ-15	64K-Bit CMOS PARALLEL E2PROM	Catalyst Semiconductor
4	CAT28C64BJ-15T	64K-Bit CMOS PARALLEL E2PROM	Catalyst Semiconductor
5	HM538123BJ-10	100ns; V(cc): -0.5 to +7.0V; 1M VRAM (128 -kword x 8-bit)	Hitachi Semiconductor
6	MH25632BJ-10	Access time: 100 ns, 265K x 4 bit dynamic RAM	Mitsubishi Electric Corporation
7	TC528128BJ-10	100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM	TOSHIBA
8	TC551664BJ-12	65,536-WORD BY 16-BIT CMOS STATIC RAM	TOSHIBA
9	TC551664BJ-15	65,536-WORD BY 16-BIT CMOS STATIC RAM	TOSHIBA
10	TC558128BJ-12	131,072-WORD BY 8-BIT CMOS STATIC RAM	TOSHIBA
11	TC558128BJ-15	131,072-WORD BY 8-BIT CMOS STATIC RAM	TOSHIBA
12	TC55V16648BJ-10	65,536-WORD BY 16-BIT CMOS STATIC RAM	TOSHIBA
13	TC55V16648BJ-12	65,536-WORD BY 16-BIT CMOS STATIC RAM	TOSHIBA
14	TC55V16648BJ-15	65,536-WORD BY 16-BIT CMOS STATIC RAM	TOSHIBA
15	TC55V1664BJ-10	MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM	TOSHIBA
16	TC55V1664BJ-12	MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM	TOSHIBA
17	TC55V1664BJ-15	MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM	TOSHIBA
18	TC55V328BJ-12	32,768 WORD-8 BIT STATIC RAM	TOSHIBA
19	TC55V328BJ-15	32,768 WORD-8 BIT STATIC RAM	TOSHIBA
20	TC55V8128BJ-10	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS	TOSHIBA
21	TC55V8128BJ-12	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS	TOSHIBA
22	TC55V8128BJ-15	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS	TOSHIBA

Datasheets found :: 22 Page: | 1 |