No. |
Part Name |
Description |
Manufacturer |
1 |
HM538123BJ-10 |
100ns; V(cc): -0.5 to +7.0V; 1M VRAM (128 -kword x 8-bit) |
Hitachi Semiconductor |
2 |
MH25632BJ-10 |
Access time: 100 ns, 265K x 4 bit dynamic RAM |
Mitsubishi Electric Corporation |
3 |
TC528128BJ-10 |
100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
4 |
TC55V16648BJ-10 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
5 |
TC55V1664BJ-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM |
TOSHIBA |
6 |
TC55V8128BJ-10 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
TOSHIBA |
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