| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HM538123BJ-8 |
80ns; V(cc): -0.5 to +7.0V; 1M VRAM (128 -kword x 8-bit) |
Hitachi Semiconductor |
| 2 |
HYB514400BJ-80 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
Siemens |
| 3 |
HYB514800BJ-80 |
512kx8-Bit Dynamic RAM |
Siemens |
| 4 |
IP1524BJ-883B |
Advanced Regulating Pulse Width Modulator |
SemeLAB |
| 5 |
LC321664BJ-80 |
1 MEG (65536 words x 16 bit) DRAM fast page mode, byte write |
SANYO |
| 6 |
LC321667BJ-80 |
1 MEG (65536 words x 16 bit) DRAM EDO page mode, byte write |
SANYO |
| 7 |
MH25632BJ-8 |
Access time: 80 ns, 265K x 4 bit dynamic RAM |
Mitsubishi Electric Corporation |
| 8 |
SG1524BJ-883B |
Flyback, Forward and Isolated |
Microsemi |
| 9 |
SG1526BJ-883B |
Flyback, Forward and Isolated |
Microsemi |
| 10 |
TC514260BJ-80 |
80ns; V(in/out): -1 to +7V; 700mW; 50mA; 262,144 word x 16 bit dynamic RAM |
TOSHIBA |
| 11 |
TC528128BJ-80 |
80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
| | | |
