| No. |
Part Name |
Description |
Manufacturer |
| 1 |
5082-A401-BN000 |
7.6 mm (0.3 inch) Micro Bright Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 2 |
5082-A403-BN000 |
7.6 mm (0.3 inch) Micro Bright Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 3 |
5082-A411-BN000 |
Black Surface Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 4 |
5082-A413-BN000 |
Black Surface Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 5 |
BIR-BN0331 |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 6 |
BIR-BN03J4G |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 7 |
BIR-BN03J4G-1 |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 8 |
BIR-BN03J7M |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 9 |
BIR-BN0731 |
Blue transparent, infrared emitting diode |
Yellow Stone Corp |
| 10 |
BIR-BN07J4G |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 11 |
BIR-BN07J4G-1 |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 12 |
CDBN001A |
SMD Schottky Barrier Diode |
Comchip Technology |
| 13 |
CDBN00340 |
SMD Schottky Barrier Diode |
Comchip Technology |
| 14 |
CDBN0130 |
SMD Schottky Barrier Diode |
Comchip Technology |
| 15 |
CDBN0145 |
SMD Schottky Barrier Diode |
Comchip Technology |
| 16 |
CDBN0230 |
SMD Schottky Barrier Diode |
Comchip Technology |
| 17 |
CDBN0245 |
SMD Schottky Barrier Diode |
Comchip Technology |
| 18 |
CTBN0812V-G |
Transient Voltage Suppressor (TVS) Array, VC=20V, VPV=16kV, IPP=12A |
Comchip Technology |
| 19 |
CTBN0824V-G |
Transient Voltage Suppressor (TVS) Array, VC=43V, VPV=16kV, IPP=5A |
Comchip Technology |
| 20 |
CTBN083V0-G |
Transient Voltage Suppressor (TVS) Array, VC=8V, VPV=16kV, IPP=17A |
Comchip Technology |
| 21 |
HDSP-A401-BN000 |
7.6 mm (0.3 inch) Micro Bright Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 22 |
HDSP-A403-BN000 |
7.6 mm (0.3 inch) Micro Bright Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 23 |
HDSP-A411-BN000 |
Black Surface Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 24 |
HDSP-A413-BN000 |
Black Surface Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 25 |
M470L2923BN0-CA2 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 26 |
M470L2923BN0-CA2 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 27 |
M470L2923BN0-CB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 28 |
M470L2923BN0-CB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 29 |
M470L2923BN0-CCC |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| 30 |
M470L2923BN0-CLA2 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| | | |
