No. |
Part Name |
Description |
Manufacturer |
1 |
BSR30 |
60 V, 1 A PNP medium power transistor |
Nexperia |
2 |
BSR30 |
60 V, 1 A PNP medium power transistor |
NXP Semiconductors |
3 |
BSR30 |
PNP medium power transistors |
Philips |
4 |
BSR30 |
SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
Zetex Semiconductors |
5 |
BSR31 |
60 V, 1 A PNP medium power transistor |
Nexperia |
6 |
BSR31 |
60 V, 1 A PNP medium power transistor |
NXP Semiconductors |
7 |
BSR31 |
PNP medium power transistors |
Philips |
8 |
BSR31 |
SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
9 |
BSR33 |
80V PNP MEDIUM POWER TRANSISTOR IN SOT89 |
Diodes |
10 |
BSR33 |
SOT-89 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
11 |
BSR33 |
80 V, 1 A PNP medium power transistor |
Nexperia |
12 |
BSR33 |
80 V, 1 A PNP medium power transistor |
NXP Semiconductors |
13 |
BSR33 |
PNP medium power transistors |
Philips |
14 |
BSR33 |
PNP medium power transistors 60 to 100 Volts |
Zetex Semiconductors |
15 |
BSR33TA |
80V PNP MEDIUM POWER TRANSISTOR IN SOT89 |
Diodes |
16 |
MRF18030B |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
17 |
MRF18030BSR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
18 |
MRF18060B |
MRF18060B, MRF18060BR3, MRF18060BLSR3, MRF18060BSR3 1.90-1.99 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
19 |
MRF18060BSR3 |
1.90–1.99 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
20 |
MRF18060BSR3 |
RF Power Field Effect Transistors |
Motorola |
21 |
MRF18090BSR3 |
1.90–1.99 GHz, 90 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
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