| No. |
Part Name |
Description |
Manufacturer |
| 1 |
74ABT5074 |
Synchronizing dual D-type flip-flop with metastable immune characteristics |
Philips |
| 2 |
74ABT5074D |
Synchronizing dual D-type flip-flop with metastable immune characteristics |
Philips |
| 3 |
74ABT5074DB |
Synchronizing dual D-type flip-flop with metastable immune characteristics |
Philips |
| 4 |
74ABT5074N |
Synchronizing dual D-type flip-flop with metastable immune characteristics |
Philips |
| 5 |
74ABT5074PW |
Synchronizing dual D-type flip-flop with metastable immune characteristics |
Philips |
| 6 |
AME8815AEBT500 |
1.5A CMOS LDO |
AME |
| 7 |
AME8815AEBT500 |
1.5A CMOS LDO |
Analog Microelectronics |
| 8 |
AME8815BEBT500 |
1.5A CMOS LDO |
AME |
| 9 |
AME8815BEBT500 |
1.5A CMOS LDO |
Analog Microelectronics |
| 10 |
CMBT5087 |
0.225W General Purpose PNP SMD Transistor. 50V Vceo, 0.050A Ic, 250 hFE. Complementary BC857B |
Continental Device India Limited |
| 11 |
CMBT5088 |
0.225W General Purpose NPN SMD Transistor. 30V Vceo, 0.050A Ic, 300 hFE. Complementary BC848C |
Continental Device India Limited |
| 12 |
CMBT5089 |
0.225W General Purpose NPN SMD Transistor. 25V Vceo, 0.050A Ic, 400 hFE. Complementary BC848C |
Continental Device India Limited |
| 13 |
HMBT5086 |
PNP EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 14 |
HMBT5087 |
PNP EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 15 |
HMBT5088 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 16 |
HMBT5089 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 17 |
M29W102BT50N1T |
1 Mbit 64Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
ST Microelectronics |
| 18 |
M29W102BT50N6T |
1 Mbit 64Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
ST Microelectronics |
| 19 |
M29W102BT50NZ1T |
1 Mbit (64Kb x16, boot block) low voltage single supply flash memory, Vcc = 2.7 to 3.6V, 50ns |
SGS Thomson Microelectronics |
| 20 |
M29W102BT50NZ6T |
1 Mbit (64Kb x16, boot block) low voltage single supply flash memory, Vcc = 2.7 to 3.6V, 50ns |
SGS Thomson Microelectronics |
| 21 |
MAX6023EBT50 |
Precision, Low-Power, Low-Dropout, UCSP Voltage Reference |
MAXIM - Dallas Semiconductor |
| 22 |
MAX6023EBT50+ |
Precision, Low-Power, Low-Dropout, UCSP Voltage Reference |
MAXIM - Dallas Semiconductor |
| 23 |
MAX6023EBT50-T |
Precision, Low-Power, Low-Dropout, UCSP Voltage Reference |
MAXIM - Dallas Semiconductor |
| 24 |
MMBT5067LT1 |
Low noise transistor |
Motorola |
| 25 |
MMBT5086 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 26 |
MMBT5086 |
PNP silicon low noise transistor. |
Motorola |
| 27 |
MMBT5086 |
PNP (LOW NOISE TRANSISTOR) |
Samsung Electronic |
| 28 |
MMBT5087 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 29 |
MMBT5087 |
PNP silicon low noise transistor. |
Motorola |
| 30 |
MMBT5087 |
50 V, 50 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
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