No. |
Part Name |
Description |
Manufacturer |
1 |
BU408 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
2 |
BU408 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
3 |
BU408 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
4 |
BU408 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
5 |
BU408 |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
6 |
BU408 |
High voltage transistor for switching applications |
SGS-ATES |
7 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
8 |
BU4081B |
Quad 2-input AND gate |
ROHM |
9 |
BU4081B/BF/BFV |
Standard Logic LSIs > CMOS logic BU4000B Series |
ROHM |
10 |
BU4081BF |
Quad 2-input AND gate |
ROHM |
11 |
BU4081BFV |
Quad 2-input AND gate |
ROHM |
12 |
BU408D |
NPN POWER TRANSISTOR |
Boca Semiconductor Corporation |
13 |
BU408D |
Leaded Power Transistor General Purpose |
Central Semiconductor |
14 |
BU408D |
POWER TRANSISTORS(7A,150-200V,60W) |
MOSPEC Semiconductor |
15 |
BU408D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
16 |
BU408D |
High voltage transistor for switching applications |
SGS-ATES |
17 |
GBU408 |
Bridge Rectifiers |
Diodes |
18 |
GBU408-G |
Bridge Rectifiers, VRRM=800V, VDC=800V, I(AV)=4A |
Comchip Technology |
19 |
KBU408 |
4 AMP SILICON BRIDGE RECTIFIER |
Fuji Electric |
20 |
KBU408 |
4.0A BRIDGE RECTIFIER |
Won-Top Electronics |
21 |
KBU408G |
4.0A GLASS PASSIVATED BRIDGE RECTIFIER |
Won-Top Electronics |
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