| No. |
Part Name |
Description |
Manufacturer |
| 1 |
-7L |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 2 |
-8 |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 3 |
-8L |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 4 |
1,25AND1,0625GBD,LC,2X5,E |
Transceivers by Form-factor MSA - Mulltimode 850nm -40C to 85C |
Infineon |
| 5 |
1,25GBIT/S,SC,1X9,3.3&5V |
Transceivers by Form-factor MSA - Product Type |
Infineon |
| 6 |
1.0625GBD,LC,2X5 |
Transceivers by Form-factor MSA - |
Infineon |
| 7 |
1.0625GBD,LC,2X5/2X10 |
Transceivers by Form-factor MSA - Single Mode 1300 nm, 2x5/2x10, LC Connector |
Infineon |
| 8 |
1.25GBIT/S,LC,SFP,3.3V |
Transceivers by Form-factor MSA - SFP - Multimode 850nm, VCSEL, 1.25GBit/s GBE, 1.0625 GBit/s FC, OC-48 Transceiver, LC |
Infineon |
| 9 |
1203P60 |
PWM Current-Mode Controller for Universal Off-Line Supplies Featuring Standby and Short Circuit |
ON Semiconductor |
| 10 |
12136AF |
Dolby B-Type Noise Reduction System |
Hitachi Semiconductor |
| 11 |
1N542 |
Tungsten point contact germanium diode - detection, sold by matched pairs (2x1N542) |
SESCOSEM |
| 12 |
2,125AND1,0625GBD,LC,2X5 |
Transceivers by Form-factor MSA - Multimode 850nm VCSEL TRX |
Infineon |
| 13 |
2.125AND1.0625GBD,LC,SFP, |
Transceivers by Form-factor MSA - SFP - Multimode 850nm VCSEL; 2.125 and 1.0625 Gbit/s FC; 1.25 GBE TRX with LC-Connector |
Infineon |
| 14 |
28LV64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle |
Microchip |
| 15 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 16 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 17 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 18 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 19 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 20 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 21 |
2SC2851 |
Transistors (Selection Guide by Applications and Functions) |
Panasonic |
| 22 |
2SC2988 |
Transistors (Selection Guide by Applications and Functions) |
Panasonic |
| 23 |
2SC4767 |
Transistors (Selection Guide by Applications and Functions) |
Panasonic |
| 24 |
2SC4893 |
Transistors (Selection Guide by Applications and Functions) |
Panasonic |
| 25 |
2SC5021 |
Transistors (Selection Guide by Applications and Functions) |
Panasonic |
| 26 |
2SD2328 |
TRANSISTORS(SELECTION GUIDE BY APPLICATIONS AND FUNCTIONS) |
Panasonic |
| 27 |
2SD2331 |
TRANSISTORS(SELECTION GUIDE BY APPLICATIONS AND FUNCTIONS) |
Panasonic |
| 28 |
2SD2333 |
TRANSISTORS(SELECTION GUIDE BY APPLICATIONS AND FUNCTIONS) |
Panasonic |
| 29 |
2SD2335 |
TRANSISTORS(SELECTION GUIDE BY APPLICATIONS AND FUNCTIONS) |
Panasonic |
| 30 |
2SD2356 |
TRANSISTORS(SELECTION GIUDE BY APPLICATIONS AND FUNCTIONS) |
Panasonic |
| | | |
