| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 2 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 3 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 4 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 5 |
BD244A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 6 |
BD244B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 7 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 8 |
CAT5136 |
Digital Potentiometer (POT), 128-Tap, with I2C Interface |
ON Semiconductor |
| 9 |
CAT5140 |
Digital Potentiometer (POT), 256-Tap, with I2C Interface and Integrated EEPROM |
ON Semiconductor |
| 10 |
CAT5221 |
Digital Potentiometer (POT), 64-Tap, with I2C Interface |
ON Semiconductor |
| 11 |
CAT5251 |
Digital Potentiometer (POT), Quad 256-Tap, with I2C Interface |
ON Semiconductor |
| 12 |
MJ2955 |
PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W. |
USHA India LTD |
| 13 |
MJE2955T |
PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W. |
USHA India LTD |
| 14 |
SGW10N60A |
IGBTs & DuoPacks - 10A 600V TO247AC IGBT |
Infineon |
| 15 |
SGW15N120 |
IGBTs & DuoPacks - 15A 1200V TO247AC IGBT |
Infineon |
| 16 |
SGW15N60 |
IGBTs & DuoPacks - 15A 600V TO247AC IGBT |
Infineon |
| 17 |
SGW20N60 |
IGBTs & DuoPacks - 20A 600V TO247AC IGBT |
Infineon |
| 18 |
SGW25N120 |
IGBTs & DuoPacks - 25A 1200V TO247AC IGBT |
Infineon |
| 19 |
SGW30N60 |
IGBTs & DuoPacks - 30A 600V TO247AC IGBT |
Infineon |
| 20 |
SKW07N120 |
IGBTs & DuoPacks - 7A 1200V TO247AC IGBT+Diode |
Infineon |
| 21 |
SKW10N60A |
IGBTs & DuoPacks - 10A 600V TO247AC IGBT+Diode |
Infineon |
| 22 |
SKW15N120 |
IGBTs & DuoPacks - 15A 1200V TO247AC IGBT+Diode |
Infineon |
| 23 |
SKW15N60 |
IGBTs & DuoPacks - 15A 600V TO247AC IGBT+Diode |
Infineon |
| 24 |
SKW20N60 |
IGBTs & DuoPacks - 20A 600V TO247AC IGBT+Diode |
Infineon |
| 25 |
SKW25N120 |
IGBTs & DuoPacks - 25A 1200V TO247AC IGBT+Diode |
Infineon |
| 26 |
SKW30N60 |
IGBTs & DuoPacks - 30A 600V TO247AC IGBT+Diode |
Infineon |
| 27 |
ST72321AR6 |
8-BIT MCU WITH NESTED INTERRUPTS, FLASH,10-BIT ADC, FIVE TIMERS, SPI, SCI, I2C INTERFACE |
ST Microelectronics |
| 28 |
ST72321AR7 |
8-BIT MCU WITH NESTED INTERRUPTS, FLASH,10-BIT ADC, FIVE TIMERS, SPI, SCI, I2C INTERFACE |
ST Microelectronics |
| 29 |
ST72321AR9 |
8-BIT MCU WITH NESTED INTERRUPTS, FLASH,10-BIT ADC, FIVE TIMERS, SPI, SCI, I2C INTERFACE |
ST Microelectronics |
| 30 |
ST72321J7 |
8-BIT MCU WITH NESTED INTERRUPTS, FLASH, 10-BIT ADC, FIVE TIMERS, SPI, SCI, I2C INTERFACE |
ST Microelectronics |
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