| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N3021 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 2 |
2N3022 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 3 |
2N3023 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 4 |
2N3024 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 5 |
2N3025 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 6 |
2N3026 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 7 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 8 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 9 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 10 |
2N6107-D |
Complementary Silicon Plastic Power Transistors |
ON Semiconductor |
| 11 |
2N6121 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
| 12 |
2N6122 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
| 13 |
2N6123 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
| 14 |
2N6124 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
| 15 |
2N6125 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
| 16 |
2N6126 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
| 17 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 18 |
2N6486 |
NPN/PNP PLASTIC POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 19 |
2N6487 |
NPN/PNP PLASTIC POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 20 |
2N6488 |
NPN/PNP PLASTIC POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 21 |
2N6489 |
NPN/PNP PLASTIC POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 22 |
2N6490 |
NPN/PNP PLASTIC POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 23 |
2N6491 |
NPN/PNP PLASTIC POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 24 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
| 25 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
| 26 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 27 |
5962-87539013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 28 |
5962-8753901LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 29 |
5962-87539053X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 30 |
5962-8753905LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
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