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Datasheets for C RA

Datasheets found :: 29329
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No. Part Name Description Manufacturer
1 24C44 256-Bit Serial Nonvolatile CMOS Static RAM Catalyst Semiconductor
2 28C64A Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28C64A is a 64K bit CMOS Parallel EEPROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external com Microchip
3 28LV64A Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle Microchip
4 29103BRA 16K x 1 Asynchronous CMOS Static RAM Intersil
5 29104BJA 2K x 8 Asynchronous CMOS Static RAM Intersil
6 29109BRA 16K x 1 Asynchronous CMOS Static RAM Intersil
7 29110BJA 2K x 8 Asynchronous CMOS Static RAM Intersil
8 29F68 Dynamic RAM Controller Fairchild Semiconductor
9 3DS16-325 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating 3D PLUS
10 3DS16-325SC-15 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating 3D PLUS
11 3DS16-325SC-20 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating 3D PLUS
12 3DS16-325SI-15 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating 3D PLUS
13 3DS16-325SI-20 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating 3D PLUS
14 4036BP 4 word x 8 bit static RAM (binary addressing) TOSHIBA
15 4039BP 4 word x 8 bit static RAM (direct word-line addressing) TOSHIBA
16 41C16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Integrated Silicon Solution Inc
17 42S16400A 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
18 42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
19 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
20 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
21 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
22 51256SL 256K(32K x 8) CMOS SLOW STATIC RAM Intel
23 5164SL 64K (8K x 8) CMOS SLOW STATIC RAM Intel
24 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
25 54S416T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
26 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
27 5962-03218 40W Total Output Power 28 Vin +3.3 Vout Single DC-DC Radiation Hardened Converter in a M3G Package. DLA Number 5962-03218 International Rectifier
28 5962-03219 40W Total Output Power 28 Vin +5 Vout Single DC-DC Radiation Hardened Converter in a M3G Package. DLA Number 5962-03219 International Rectifier
29 5962-03220 40W Total Output Power 28 Vin +5.2 Vout Single DC-DC Radiation Hardened Converter in a M3G Package. DLA Number 5962-03220 International Rectifier
30 5962-03221 40W Total Output Power 28 Vin +12 Vout Single DC-DC Radiation Hardened Converter in a M3G Package. DLA Number 5962-03221 International Rectifier


Datasheets found :: 29329
Page: | 1 | 2 | 3 | 4 | 5 |



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