| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N5913 |
Silicon NPN Overalay RF Transistor, 12.5 Volt, for class-C VHF/UHF amplifiers |
RCA Solid State |
| 2 |
BB301C |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier |
Hitachi Semiconductor |
| 3 |
BB301M |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier |
Hitachi Semiconductor |
| 4 |
BB302C |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier |
Hitachi Semiconductor |
| 5 |
BB302M |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier |
Hitachi Semiconductor |
| 6 |
BB402M |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier |
Hitachi Semiconductor |
| 7 |
BB403M |
Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
Hitachi Semiconductor |
| 8 |
BFX17 |
Epitaxial planar NPN transistor designed for high-voltage, high-current class C VHF amplifier applications |
SGS-ATES |
| 9 |
TA4018F |
Bipolar Linear Integrated Circuit Silicon Monolithic VHF Gain Control Amplifier Application |
TOSHIBA |
| 10 |
UPC2791TB |
5 V, SUPER MINIMOLD SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER |
NEC |
| 11 |
UPC2791TB-E3 |
5 V, SUPER MINIMOLD SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER |
NEC |
| 12 |
UPC2792TB |
5 V, SUPER MINIMOLD SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER |
NEC |
| 13 |
UPC2792TB-E3 |
5 V, SUPER MINIMOLD SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER |
NEC |
| | | |
