No. |
Part Name |
Description |
Manufacturer |
1 |
AMC1200BDUB |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 |
Texas Instruments |
2 |
AMC1200BDUBR |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 |
Texas Instruments |
3 |
AMC1200BDWV |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOIC -40 to 105 |
Texas Instruments |
4 |
AMC1200BDWVR |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOIC -40 to 105 |
Texas Instruments |
5 |
KM416C1200B |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
6 |
KM416C1200BJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
7 |
KM416C1200BJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
8 |
KM416C1200BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
9 |
KM416C1200BJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
10 |
KM416C1200BJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
11 |
KM416C1200BJL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
12 |
KM416C1200BT-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
13 |
KM416C1200BT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
14 |
KM416C1200BT-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
15 |
KM416C1200BTL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
16 |
KM416C1200BTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
17 |
KM416C1200BTL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
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