| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SC1426 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC1426, see the Electrical Characteristics table) |
NEC |
| 2 |
2SC1426 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC1426, see the Electrical Characteristics table) |
NEC |
| 3 |
2SC1426 |
NPN SILICON EPITAXIAL DIFFUSED TRANSISTOR |
Unknow |
| 4 |
C1426 |
Marking (top of can) for NE41615 part number, 15 NEC package |
NEC |
| 5 |
CY7C1426AV18 |
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture |
Cypress |
| 6 |
CY7C1426AV18-167BZXC |
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture |
Cypress |
| 7 |
LTC1426 |
Micropower Dual 6-Bit PWM DAC |
Linear Technology |
| 8 |
LTC1426C |
Micropower Dual 6-Bit PWM DAC |
Linear Technology |
| 9 |
LTC1426CMS8 |
Micropower Dual 6-Bit PWM DAC |
Linear Technology |
| 10 |
LTC1426CMS8#PBF |
Micropower Dual 6-Bit PWM DAC |
Linear Technology |
| 11 |
LTC1426CMS8#TR |
Micropower Dual 6-Bit PWM DAC |
Linear Technology |
| 12 |
LTC1426CMS8#TRPBF |
Micropower Dual 6-Bit PWM DAC |
Linear Technology |
| 13 |
LTC1426CS8 |
Micropower Dual 6-Bit PWM DAC |
Linear Technology |
| 14 |
LTC1426CS8#PBF |
Micropower Dual 6-Bit PWM DAC |
Linear Technology |
| 15 |
LTC1426CS8#TR |
Micropower Dual 6-Bit PWM DAC |
Linear Technology |
| 16 |
LTC1426CS8#TRPBF |
Micropower Dual 6-Bit PWM DAC |
Linear Technology |
| 17 |
LTC1426I |
Micropower Dual 6-Bit PWM DAC |
Linear Technology |
| 18 |
LTC1426IS8 |
Micropower Dual 6-Bit PWM DAC |
Linear Technology |
| 19 |
LTC1426IS8#PBF |
Micropower Dual 6-Bit PWM DAC |
Linear Technology |
| 20 |
LTC1426IS8#TR |
Micropower Dual 6-Bit PWM DAC |
Linear Technology |
| 21 |
LTC1426IS8#TRPBF |
Micropower Dual 6-Bit PWM DAC |
Linear Technology |
| 22 |
TC1426 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 23 |
TC1426 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 24 |
TC1426 |
1.2A DUAL HIGH-SPEED MOSFET DRIVERS |
TelCom Semiconductor |
| 25 |
TC1426COA |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. ... |
Microchip |
| 26 |
TC1426COA |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. ... |
Microchip |
| 27 |
TC1426COA |
1.2A dual high-speed MOSFET driver. |
TelCom Semiconductor |
| 28 |
TC1426COA713 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. ... |
Microchip |
| 29 |
TC1426COA713 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. ... |
Microchip |
| 30 |
TC1426CPA |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. ... |
Microchip |
| | | |
