| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SC2310 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 2 |
2SC2310 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 3 |
2SC2310 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 4 |
2SC2312 |
RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 5 |
2SC2314 |
NPN Epitaxial Planar Silicon Transistor 27MHz CB Transceiver Driver Applications |
SANYO |
| 6 |
2SC2315 |
SILICON NPN TRIPLE DIFFUSED MESA |
Sanken |
| 7 |
2SC2316 |
SILICON NPN TRIPLE DIFFUSED MESA |
Sanken |
| 8 |
2SC2318 |
Silicon NPN epitaxial planar high-power for CATV transistor |
TOSHIBA |
| 9 |
BC231 |
PNP epitaxial planar silicon transistor |
Texas Instruments |
| 10 |
C2310 |
Temperature Compensated Crystal Oscillators |
Vectron |
| 11 |
C231A |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 100 V. |
Motorola |
| 12 |
C231A3 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 100 V. |
Motorola |
| 13 |
C231B |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 200 V. |
Motorola |
| 14 |
C231B3 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 200 V. |
Motorola |
| 15 |
C231D |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 400 V. |
Motorola |
| 16 |
C231D3 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 400 V. |
Motorola |
| 17 |
C231F |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 50 V. |
Motorola |
| 18 |
C231F3 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 50 V. |
Motorola |
| 19 |
C231M |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 600 V. |
Motorola |
| 20 |
C231M3 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 600 V. |
Motorola |
| 21 |
CLC231 |
Evaluation Board |
Comlinear Corporation |
| 22 |
CLC231 |
Fast Settling, Wideband Buff-Amp™ |
Comlinear Corporation |
| 23 |
CLC231 |
Fast Settling Wideband Buff-Amp |
National Semiconductor |
| 24 |
CLC231A8 |
Fast Settling, Wideband Buff-Amp™ |
Comlinear Corporation |
| 25 |
CLC231A8AC |
Fast Settling Wideband Buff-Amp |
National Semiconductor |
| 26 |
CLC231A8C |
Fast Settling/ Wideband Buff-Amp (Av = 1 to 5) |
National Semiconductor |
| 27 |
CLC231A8CC |
Fast Settling Wideband Buff-Amp |
National Semiconductor |
| 28 |
CLC231AI |
Fast Settling, Wideband Buff-Amp™ |
Comlinear Corporation |
| 29 |
CLC231AI |
Fast Settling/ Wideband Buff-Amp (Av = 1 to 5) |
National Semiconductor |
| 30 |
CLC231AK |
Fast Settling, Wideband Buff-Amp™ |
Comlinear Corporation |
| | | |
