No. |
Part Name |
Description |
Manufacturer |
1 |
GM76C256CL |
32K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
2 |
GM76C256CLE |
32K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
3 |
GM76C256CLEFW |
32K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
4 |
GM76C256CLET |
32K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
5 |
GM76C256CLFW |
32K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
6 |
GM76C256CLL |
32K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
7 |
GM76C256CLLE |
32K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
8 |
GM76C256CLLEFW |
32K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
9 |
GM76C256CLLET |
32K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
10 |
GM76C256CLLFW |
32K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
11 |
GM76C256CLLT |
32K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
12 |
GM76C256CLT |
32K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
13 |
KM44C256CL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
14 |
KM44C256CL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
15 |
KM44C256CL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
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