| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SC2712 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 2 |
2SC2712-BL |
SOT-23 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 3 |
2SC2712-GR |
SOT-23 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 4 |
2SC2712-O |
SOT-23 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 5 |
2SC2712-Y |
SOT-23 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 6 |
2SC2712GT1 |
General Purpose Amplifier Transistor |
ON Semiconductor |
| 7 |
CSA1162GR |
0.150W Low Frequency PNP SMD Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE. Complementary CSC2712 |
Continental Device India Limited |
| 8 |
CSA1162Y |
0.150W Low Frequency PNP SMD Transistor. 50V Vceo, 0.150A Ic, 120 - 240 hFE. Complementary CSC2712 |
Continental Device India Limited |
| 9 |
CSC2712BL |
0.150W Low Frequency NPN SMD Transistor. 50V Vceo, 0.150A Ic, 350 - 700 hFE. Complementary CSA1162 |
Continental Device India Limited |
| 10 |
CSC2712GR |
0.150W Low Frequency NPN SMD Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE. Complementary CSA1162 |
Continental Device India Limited |
| 11 |
CSC2712Y |
0.150W Low Frequency NPN SMD Transistor. 50V Vceo, 0.150A Ic, 120 - 240 hFE. Complementary CSA1162 |
Continental Device India Limited |
| 12 |
MSC2712GT1 |
General Purpose Amplifier Transistor |
ON Semiconductor |
| 13 |
MSC2712GT1-D |
General Purpose Amplifier Transistor NPN Surface Mount |
ON Semiconductor |
| 14 |
MSC2712YT1 |
General Purpose Amplifier Transistor |
ON Semiconductor |
| 15 |
UPC2712T |
2.6 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT |
NEC |
| 16 |
UPC2712T-E3 |
2.6 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT |
NEC |
| 17 |
UPC2712TB |
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER |
NEC |
| 18 |
UPC2712TB-E3 |
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER |
NEC |
| | | |
