No. |
Part Name |
Description |
Manufacturer |
1 |
2SC2715 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications |
TOSHIBA |
2 |
C1L |
Marking for UPC2715 part number, TO6 NEC package |
NEC |
3 |
KSC2715 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
4 |
KSC2715 |
NPN (FM RADIO AMP/ MIX/ CONV OSC/ IF AMP) |
Samsung Electronic |
5 |
KSC2715OMTF |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
6 |
KSC2715YMTF |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
7 |
UC2715 |
Complementary Switch FET Drivers with Auxiliary Output |
Texas Instruments |
8 |
UC2715D |
Complementary Switch FET Drivers with Auxiliary Output |
Texas Instruments |
9 |
UC2715DP |
Complementary Switch FET Drivers with Auxiliary Output |
Texas Instruments |
10 |
UC2715DPTR |
Complementary Switch FET Drivers with Auxiliary Output |
Texas Instruments |
11 |
UC2715DTR |
Complementary Switch FET Drivers with Auxiliary Output |
Texas Instruments |
12 |
UC2715DTRG4 |
Complementary Switch FET Drivers with Auxiliary Output 8-SOIC -40 to 85 |
Texas Instruments |
13 |
UC2715N |
Complementary Switch FET Drivers with Auxiliary Output |
Texas Instruments |
14 |
UPC2715 |
1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT |
NEC |
15 |
UPC2715T |
1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT |
NEC |
16 |
UPC2715T-E3 |
1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT |
NEC |
17 |
UPC2715T-T1 |
Super small-size low-current high-freq. wide-band amp. |
NEC |
18 |
UPC2715T-T2 |
Super small-size low-current high-freq. wide-band amp. |
NEC |
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