| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2C3866A |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
| 2 |
2C3866A |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
| 3 |
2N3866 |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
| 4 |
2N3866A |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
| 5 |
2N3866AUB |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
| 6 |
2SC380 |
Transistor - JEIDA Series |
National Semiconductor |
| 7 |
2SC380 |
Silicon NPN planar transistor, FM IF (10.7MHz) amplifier applications |
TOSHIBA |
| 8 |
2SC3802K |
Epitaxial Planar NPN Silicon Transistor |
ROHM |
| 9 |
2SC3803 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications |
TOSHIBA |
| 10 |
2SC3804 |
NPN epitaxial planar RF power transistor 13.5V designed for power amplifiers in the 800-900MHz band range |
Mitsubishi Electric Corporation |
| 11 |
2SC3805 |
Transistor Silicon NPN Epitaxial Type (PCT process) TV Horizontal Deflection Output Applications TV Chroma Output Applications |
TOSHIBA |
| 12 |
2SC3807 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 13 |
2SC3808 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 14 |
2SC3809 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 15 |
2SC380A |
Radio Frequency Transistor specification table |
TOSHIBA |
| 16 |
2SC380A |
Silicon NPN planar transistor, FM IF (10.7MHz) amplifier applications |
TOSHIBA |
| 17 |
2SC380TM |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications |
TOSHIBA |
| 18 |
2SC381 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 19 |
2SC381 |
Silicon NPN epitaxial planar transistor, FM IF Amplifier Application |
TOSHIBA |
| 20 |
2SC381 |
LICON NPN EPITAXIAL PLANAR TRANSISTOR |
Unknow |
| 21 |
2SC381-BN |
LICON NPN EPITAXIAL PLANAR TRANSISTOR |
Unknow |
| 22 |
2SC381-O |
LICON NPN EPITAXIAL PLANAR TRANSISTOR |
Unknow |
| 23 |
2SC381-R |
LICON NPN EPITAXIAL PLANAR TRANSISTOR |
Unknow |
| 24 |
2SC3810 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 25 |
2SC3811 |
Small-signal device - Small-signal transistor - High-Speed Switch�VCO and High Freq. |
Panasonic |
| 26 |
2SC3814 |
Class C, 940MHz 7 volt power transistor (This datasheet of NE090101-07 is also the datasheet of 2SC3814, see the Electrical Characteristics table) |
NEC |
| 27 |
2SC3814 |
Class C, 940MHz 7 volt power transistor (This datasheet of NE090101-07 is also the datasheet of 2SC3814, see the Electrical Characteristics table) |
NEC |
| 28 |
2SC3815 |
Class C, 940MHz 7 volt power transistor (This datasheet of NEM090301-07 is also the datasheet of 2SC3815, see the Electrical Characteristics table) |
NEC |
| 29 |
2SC3815 |
Class C, 940MHz 7 volt power transistor (This datasheet of NEM090301-07 is also the datasheet of 2SC3815, see the Electrical Characteristics table) |
NEC |
| 30 |
2SC3816 |
Class C, 940MHz 7 volt power transistor (This datasheet of NEM090701-07 is also the datasheet of 2SC3816, see the Electrical Characteristics table) |
NEC |
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