| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FGC4000BX-90DS |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units |
Mitsubishi Electric Corporation |
| 2 |
FGC4000BX-90DS |
MITSUBISHI GATE TURN-OFF THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE |
Mitsubishi Electric Corporation |
| 3 |
HCC4000B |
NOR GATE |
SGS Thomson Microelectronics |
| 4 |
HCC4000B |
NOR GATE |
ST Microelectronics |
| 5 |
HCC4000B-4001B |
NOR GATE |
SGS Thomson Microelectronics |
| 6 |
HCC4000BF |
NOR GATE |
ST Microelectronics |
| 7 |
K3N7C4000B-DC |
64M-Bit (4Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 8 |
KM416C4000B |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 9 |
KM416C4000BS-45 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 45ns |
Samsung Electronic |
| 10 |
KM416C4000BS-5 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns |
Samsung Electronic |
| 11 |
KM416C4000BS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns |
Samsung Electronic |
| 12 |
LC4000B |
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs |
Lattice Semiconductor |
| 13 |
MX26C4000B |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 14 |
MX26C4000BMC-10 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 15 |
MX26C4000BMC-12 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 16 |
MX26C4000BMC-15 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 17 |
MX26C4000BMC-90 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 18 |
MX26C4000BMI-10 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 19 |
MX26C4000BMI-12 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 20 |
MX26C4000BMI-15 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 21 |
MX26C4000BMI-90 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 22 |
MX26C4000BPC-10 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 23 |
MX26C4000BPC-12 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 24 |
MX26C4000BPC-15 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 25 |
MX26C4000BPC-90 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 26 |
MX26C4000BPI-10 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 27 |
MX26C4000BPI-12 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 28 |
MX26C4000BPI-15 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 29 |
MX26C4000BPI-90 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 30 |
MX26C4000BQC-10 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
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