| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SC5810 |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications |
TOSHIBA |
| 2 |
2SC5811 |
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications |
SANYO |
| 3 |
2SC5812 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 4 |
2SC5812 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 5 |
2SC5813 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 6 |
2SC5814 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 7 |
2SC5815 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 8 |
2SC5816 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 9 |
2SC5817 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 10 |
2SC5819 |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications |
TOSHIBA |
| 11 |
JHC5819 |
45 V, 1 Amp schottky barrier rectifier chip |
Compensated Devices Incorporated |
| 12 |
JKC5819 |
45 V, 1 Amp schottky barrier rectifier chip |
Compensated Devices Incorporated |
| 13 |
LC5812 |
4-Bit Microcomputer with Internal LCD Driver |
SANYO |
| 14 |
MC58110 |
Magellan Motion Processor |
Performance Motion Devices |
| 15 |
MC58110CP |
Magellan Motion Processor |
Performance Motion Devices |
| 16 |
MC58120 |
Magellan Motion Processor |
Performance Motion Devices |
| 17 |
MC58120CP |
Magellan Motion Processor |
Performance Motion Devices |
| 18 |
MRFC581 |
NPN silicon high frequency transistor fT=5.0GHz/75mA NF=2.0dB/500MHz |
Motorola |
| 19 |
MRFC581A |
NPN silicon high frequency transistor fT=5.0GHz/75mA NF=2.0dB/500MHz |
Motorola |
| 20 |
NDL7911PC581 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (360 km). With FC-PC connector. ITU-T wavelengh 1558.17 nm. Frequency 192.4 THz. |
NEC |
| 21 |
NDL7912PC581 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (600 km). With FC-PC connector. ITU-T wavelengh 1558.17 nm. Frequency 192.4 THz. |
NEC |
| 22 |
NX8570SC581-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1558.173 nm. Frequency 192.40 THz. FC-PC connector. |
NEC |
| 23 |
NX8570SC581-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1558.173 nm. Frequency 192.40 THz. SC-PC connector. |
NEC |
| 24 |
NX8571SC581-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1558.173 nm. Frequency 192.40 THz. FC-PC connector. |
NEC |
| 25 |
NX8571SC581-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1558.173 nm. Frequency 192.40 THz. SC-PC connector. |
NEC |
| 26 |
TC581282A |
128-MBIT (16M X 8 BITS) CMOS NAND E2PROM |
TOSHIBA |
| 27 |
TC581282A |
128-MBIT (16M X 8 BITS) CMOS NAND E2PROM |
TOSHIBA |
| 28 |
TC581282AXB |
128-MBIT (16M � 8 BITS) CMOS NAND E2PROM |
TOSHIBA |
| 29 |
TC58128AFT |
128-MBIT (16M x 8 BITS) CMOS NAND E2PROM |
TOSHIBA |
| 30 |
TC5816BDC |
16 mbit (2M x 8 bits) CMOS nand flash EEPROM |
TOSHIBA |
| | | |
