No. |
Part Name |
Description |
Manufacturer |
1 |
AS5C4008ECJ-45L_883C |
512K x 8 SRAM memory array |
Austin Semiconductor |
2 |
AS5C4008ECJ-45L_IT |
512K x 8 SRAM memory array |
Austin Semiconductor |
3 |
AS5C4008ECJ-45L_XT |
512K x 8 SRAM memory array |
Austin Semiconductor |
4 |
AS5C512K8ECJ-45 |
512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT |
Austin Semiconductor |
5 |
AS5C512K8ECJ-45/H |
512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT |
Austin Semiconductor |
6 |
AS5C512K8ECJ-45E_883C |
512K x 8 SRAM - high speed with revolutionary pinout |
Austin Semiconductor |
7 |
AS5C512K8ECJ-45E_IT |
512K x 8 SRAM - high speed with revolutionary pinout |
Austin Semiconductor |
8 |
AS5C512K8ECJ-45E_XT |
512K x 8 SRAM - high speed with revolutionary pinout |
Austin Semiconductor |
9 |
AS5C512K8ECJ-45L/H |
512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT |
Austin Semiconductor |
10 |
AS5C512K8ECJ-45L_883C |
512K x 8 SRAM - high speed with revolutionary pinout |
Austin Semiconductor |
11 |
AS5C512K8ECJ-45L_IT |
512K x 8 SRAM - high speed with revolutionary pinout |
Austin Semiconductor |
12 |
AS5C512K8ECJ-45L_XT |
512K x 8 SRAM - high speed with revolutionary pinout |
Austin Semiconductor |
13 |
JR13WCCJ-4 |
High-performance water-proof circular connector JR-W connector |
Hirose Electric |
14 |
KM416C1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
15 |
KM416C1204CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
16 |
KM416V1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
17 |
KM416V1204CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
18 |
MT5C1001DCJ-40L_883C |
1 meg x 4 SRAM memory array |
Austin Semiconductor |
19 |
MT5C1001DCJ-40L_IT |
1 meg x 4 SRAM memory array |
Austin Semiconductor |
20 |
MT5C1001DCJ-40L_XT |
1 meg x 4 SRAM memory array |
Austin Semiconductor |
21 |
MT5C1005DCJ-40L_883C |
256K x 4 SRAM memory array |
Austin Semiconductor |
22 |
MT5C1005DCJ-40L_IT |
256K x 4 SRAM memory array |
Austin Semiconductor |
23 |
MT5C1005DCJ-40L_XT |
256K x 4 SRAM memory array |
Austin Semiconductor |
24 |
MT5C1008DCJ-45/883C |
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS |
Advanced Semiconductor |
25 |
MT5C1008DCJ-45L/883C |
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS |
Advanced Semiconductor |
26 |
MT5C1008DCJ-45L_883C |
128K x 8 SRAM with dual chip enable |
Austin Semiconductor |
27 |
MT5C1008DCJ-45L_IT |
128K x 8 SRAM with dual chip enable |
Austin Semiconductor |
28 |
MT5C1008DCJ-45L_XT |
128K x 8 SRAM with dual chip enable |
Austin Semiconductor |
29 |
MT5C1009DCJ-45/883C |
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE |
Austin Semiconductor |
30 |
MT5C1009DCJ-45L_883C |
128K x 8 SRAM with chip and output enable |
Austin Semiconductor |
| | | |