No. |
Part Name |
Description |
Manufacturer |
1 |
FT2500CL-6 |
Phase Control SCR 2500 Amperes Avg 200-1200 Volts |
Powerex Power Semiconductors |
2 |
GM71C18163CL-6 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
3 |
GM71CS17400CL-6 |
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
4 |
GM71CS17403CL-6 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
5 |
GM71V17403CL-6 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
6 |
GM71V18163CL-6 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
7 |
HYB25D256160BCL-6 |
256 Mbit Double Data Rate SDRAM |
Infineon |
8 |
HYB25D256400BCL-6 |
256 Mbit Double Data Rate SDRAM |
Infineon |
9 |
HYB25D256800BCL-6 |
256 Mbit Double Data Rate SDRAM |
Infineon |
10 |
HYB39S256160DCL-6 |
256 MBit Synchronous DRAM |
Infineon |
11 |
HYB39S256160DCL-6 |
256-MBit Synchronous DRAM |
Infineon |
12 |
HYB39S256400DCL-6 |
256 MBit Synchronous DRAM |
Infineon |
13 |
HYB39S256400DCL-6 |
256-MBit Synchronous DRAM |
Infineon |
14 |
HYB39S256800DCL-6 |
256 MBit Synchronous DRAM |
Infineon |
15 |
HYB39S256800DCL-6 |
256-MBit Synchronous DRAM |
Infineon |
16 |
K4E640812B-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
17 |
K4E640812B-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
18 |
K4E640812C-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
19 |
K4E640812C-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
20 |
K4E660812B-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
21 |
K4E660812B-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
22 |
K4E660812C-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
23 |
K4E660812C-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
24 |
KM44C256CL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
25 |
MSC23108CL-60DS2 |
1,048,576-word x 8-bit DRAM module |
OKI electronic components |
26 |
MSC23109CL-60DS3 |
1,048,576-word x 9-bit DRAM module |
OKI electronic components |
27 |
MSC23132CL-60BS8 |
1,048,576- word x 32-bit DRAM module |
OKI electronic components |
28 |
MSC23132CL-60DS8 |
1,048,576- word x 32-bit DRAM module |
OKI electronic components |
29 |
MSC23136CL-60BS10 |
1,048,576- word x 36-bit DRAM module |
OKI electronic components |
30 |
MSC23136CL-60DS10 |
1,048,576- word x 36-bit DRAM module |
OKI electronic components |
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