No. |
Part Name |
Description |
Manufacturer |
1 |
GM71C17400CLT-5 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
2 |
GM71C17403CLT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
3 |
GM71C17800CLT-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
4 |
GM71CS17400CLT-5 |
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns, low power |
Hynix Semiconductor |
5 |
GM71CS17403CLT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
6 |
GM71CS17800CLT-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
7 |
GM71CS18163CLT-5 |
1,048,576 words x 16 bit CMOS DRAM, 50ns, low power |
Hynix Semiconductor |
8 |
GM71V17403CLT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power |
Hynix Semiconductor |
9 |
GM71VS17403CLT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power |
Hynix Semiconductor |
10 |
HY57V643220CLT-5 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
11 |
HY57V643220CLT-55 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
12 |
KM684000CLT-5L |
512Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
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