No. |
Part Name |
Description |
Manufacturer |
1 |
GM71C17400CLT-7 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
2 |
GM71C17403CLT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
3 |
GM71C17800CLT-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
4 |
GM71CS17400CLT-7 |
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns, low power |
Hynix Semiconductor |
5 |
GM71CS17403CLT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
6 |
GM71CS17800CLT-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
7 |
GM71CS18163CLT-7 |
1,048,576 words x 16 bit CMOS DRAM, 70ns, low power |
Hynix Semiconductor |
8 |
GM71V17403CLT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power |
Hynix Semiconductor |
9 |
GM71VS17403CLT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power |
Hynix Semiconductor |
10 |
GM72V66841CLT-7J |
2097152 word x 8 bit x 4 bank synchronous dynamic RAM |
LG Semiconductor |
11 |
GM72V66841CLT-7K |
2097152 word x 8 bit x 4 bank synchronous dynamic RAM |
LG Semiconductor |
12 |
HY57V281620HCLT-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
13 |
HY57V281620HCLT-7I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
14 |
HY57V643220CLT-7 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
15 |
KM684000CLT-7L |
512Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
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